M06200 - SEMI M62 - シリコンエピタキシャルウェーハの仕様 StdPbc-0622 Such impurities may be introduced

Such impurities may be introduced into the wafer during manufacture or during various processing steps

4  Guides formed by a consensus of viewpoints are provided to suggest a foundation to specify an epitaxial wafer for use in integrated circuit manufacture at advanced design rules

This document applies to metal (e

SEMI MF1528 — Test Method for Measuring Boron Contamination in Heavily Doped n-Type Silicon Substrates by Secondary Ion Mass Spectrometry

18 — Specific Device Model for Vacuum Pump Devices

M06200 - SEMI M62 - シリコンエピタキシャルウェーハの仕様 StdPbc-0622 Such impurities may be introducedglobal Silicon Wafer Committee200912global Audits and Reviews Subcommittee20092www. semi. org20093CD ROM200511200711 Referenced SEMI Standards SEMI M1 Specifications for Polished Monocrystalline Silicon Wafers SEMI M17 Guide for a Universal Wafer Grid SEMI M18 Guider for Developing Specification Forms for Order Entry of Silicon Wafers SEMI M33 Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by Means of Total